DocumentCode
2988812
Title
Designing high-power limiter circuits with GaAs PIN diodes
Author
Smith, D.G. ; Heston, D.D. ; Allen, D.L.
Author_Institution
Raytheon Syst. Co., Dallas, TX, USA
Volume
1
fYear
1999
fDate
13-19 June 1999
Firstpage
329
Abstract
The three key parameters of passive limiter circuits: limiting, burnout and insertion loss are explained in great detail in this paper. The limiting and burnout characteristics of various size GaAs PIN diodes have been measured. Results indicate that the burnout level is proportional to diode circumference. A design concept for a broadband high-power limiter is discussed using this measured data.
Keywords
III-V semiconductors; capacitance; gallium arsenide; microwave circuits; microwave diodes; microwave limiters; p-i-n diodes; protection; semiconductor device testing; 1 GHz; 9.5 GHz; GaAs; GaAs PIN diodes; broadband high-power limiter; burnout characteristics; diode circumference; diode testing; high-power limiter circuits; insertion loss; limiting characteristics; Capacitance; Gallium arsenide; Insertion loss; Microwave circuits; Power generation; Power measurement; Radio frequency; Semiconductor diodes; Size measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779486
Filename
779486
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