An LDMOS VHF class E power amplifier using a high Q novel variable inductor

Author

Zirath, H. ; Rutledge, D.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

367

Abstract

An LDMOS based VHF Class E power amplifier has been investigated theoretically and experimentally. Simulations were verified by amplifier measurements and a record high class E output power was obtained at 144 MHz in excellent agreement with simulations. The key of the results is the use of efficient device models, simulation tools, and the invention of a novel high-Q inductor for the output series resonance network. The latter allows for low losses in the output network and simultaneously a wide tuning range for maximum output power or maximum efficiency optimization.

Keywords

MOSFET circuits; VHF amplifiers; circuit simulation; losses; power amplifiers; 144 MHz; LDMOS; VHF; amplifier measurement; class E power amplifier; device models; high Q novel variable inductor; high-Q inductor; losses; maximum efficiency optimization; maximum output power; output network; output power; output series resonance network; simulation tools; tuning range; Circuit simulation; Computational modeling; Frequency; High power amplifiers; Inductors; Magnetic switching; Power amplifiers; Power generation; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779495

Filename

779495