• DocumentCode
    2989145
  • Title

    Development of probing mark analysis model [IC testing]

  • Author

    Chao, Y.C. ; Lee, Y.J. ; Liu, John ; Shen, G.S. ; Tsai, F.J. ; Liu, D.S. ; Shih, M.K.

  • Author_Institution
    ChipMOS Technol. INC, Tainan, Taiwan
  • fYear
    2003
  • fDate
    28-30 Oct. 2003
  • Firstpage
    40
  • Lastpage
    43
  • Abstract
    A probe card is conventionally used in wafer-level testing to check defects in ICs. A stable contact resistance must be achieved when each probe is in contact with the bonding pad. A mechanical contact using excessive pressure can cause over sizing of the probing mark that may lead to damage of the die pad as well as permanent defibrination of the probe tip. In this paper, a 3D computational model has been developed for analyzing dynamic deformations of contact phenomena during probe testing by using explicit finite element analysis. The elastoplastic constitutive model of the tungsten probe is taken from micro-tester tensile testing to get the stress-strain relations. Actual probing tests with a single probe were performed to investigate the size of the probing mark. Probe tip and probing mark formation characteristics can be investigated either from tests or simulations. Both experimental and numerical methods can be employed as useful tools to study the relation between pressure forces and depth of the probing mark as well as the probe tip deformations.
  • Keywords
    contact resistance; deformation; elastoplasticity; finite element analysis; integrated circuit testing; mechanical contact; probes; stress-strain relations; tensile strength; test equipment; tungsten; IC testing; W; bonding pad probe contact; contact phenomena dynamic deformations; contact resistance; die pad damage; elastoplastic constitutive model; finite element analysis; mechanical contact; micro-tester tensile testing; probe card; probe testing; probe tip defibrination; probing mark analysis model; probing mark depth; probing mark formation; probing pressure forces; stress-strain relations; tungsten probe; wafer-level testing; Computational modeling; Contact resistance; Deformable models; Finite element methods; Integrated circuit modeling; Integrated circuit testing; Probes; Semiconductor device modeling; Tungsten; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    0-7803-8168-8
  • Type

    conf

  • DOI
    10.1109/EPTC.2003.1298690
  • Filename
    1298690