Title :
Analysis and Simulation of Parasitic Parameters for PCB Planar Transformer
Author :
Junliang Qin ; Zhong Yu ; Ke Sun ; Peiwei Wei ; Zhongwen Lan
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Three kinds of double sided PCB planar transformers are described in this paper: non-interleaving structure, part-interleaving structure and interleaving structure. The Magneto Motive Force (MMF) of the planar transformers with various structures is compared. The distribution of magnetic field intensity inside the transformers was verified by the Two Dimension Finite Element Analysis (FEA 2D). According to the relationship between the energy of leakage inductance and energy inside magnetic field, leakage inductance can be estimated. The parasitic capacitive effects and leakage inductance of various structures are simulated using software of Power Electronics Magnetics (PEmag). Finally, the interleaving structure with double secondary winding for the PCB planar transformer has been adopted to reduce the leakage inductance, and experiment is executed to compare the transformers with various structures described above.
Keywords :
finite element analysis; power electronics; power engineering computing; transformer windings; PEmag; double secondary winding; double sided PCB planar transformers; leakage inductance; magnetic field intensity; magneto motive force; noninterleaving structure; parasitic capacitive effects; parasitic parameters; part-interleaving structure; power electronics magnetics; two dimension finite element analysis; Electric fields; Finite element methods; Inductance; Magnetic fields; Magnetic flux; Power transformer insulation; Windings; double secondary winding; leakage inductance; magneto motive force(MMF); planar transformer; two dimension finite element analysis(FEA 2D);
Conference_Titel :
Control Engineering and Communication Technology (ICCECT), 2012 International Conference on
Conference_Location :
Liaoning
Print_ISBN :
978-1-4673-4499-9
DOI :
10.1109/ICCECT.2012.202