Title :
Simulation on the encapsulation effect of the high-g shock MEMS accelerometer
Author :
Jiang, Yuqi ; Du, Maohua ; Huang, Weidong ; Xu, Wei ; Luo, Le
Author_Institution :
Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
The modal and the response during acceleration of high-g shock MEMS accelerometer were simulated using finite element method based on a practical packaging model. The modal frequency of the packaging structure increases with the Young´s modulus of encapsulation resin. But the modal-frequency may be smaller then that of the packaging structure without encapsulation if the encapsulation resin is very soft. Under the 100 kG acceleration (1 G = 9.8 m/s/sup 2/), the simulated output voltage of accelerometer decreases slowly with the increase of Young´s modulus or density of encapsulation resin. The simulated output voltages are close to the analytic results. They are also linear with the environmental accelerations.
Keywords :
Young´s modulus; accelerometers; finite element analysis; microsensors; modal analysis; plastic packaging; semiconductor device models; semiconductor device packaging; Young´s modulus; double-cantilevers; encapsulation effect; encapsulation resin; finite element analysis; high-g shock MEMS accelerometer; modal frequency; packaging model; simulated output voltages; Acceleration; Accelerometers; Electric shock; Encapsulation; Finite element methods; Frequency; Micromechanical devices; Packaging; Resins; Voltage;
Conference_Titel :
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location :
Shanghai, China
Print_ISBN :
0-7803-8168-8
DOI :
10.1109/EPTC.2003.1298692