A 60-GHz CMOS Transmit/Receive Switch

Author

Ta, Chien M. ; Skafidas, Efstratios ; Evans, Robin J.

Author_Institution

Univ. of Melbourne, Parkville

fYear

2007

fDate

3-5 June 2007

Firstpage

725

Lastpage

728

Abstract

A single-pole double-throw (SPDT) transmit/receive switch (T/R switch) operating in the 57-66 GHz band is implemented on a 130-nm CMOS process. The switch exhibits an insertion loss from 4.5 dB to 5.8 dB, an isolation from 24.1 dB to 26 dB, a return loss at antenna port from -9.2 dB to -10.5 dB, and a return loss at Tx/Rx port below -15 dB for the frequency band. With a control voltage of 1.2 V the IP_1dB of the switch is 4.1 dBm. The switch features fast switching speed with rise-time and fall-time of 400 ps and 360 ps, respectively. This is the first CMOS T/R switch designed for very short range radio in 60-GHz band.

Keywords

CMOS integrated circuits; losses; semiconductor switches; telecommunication switching; CMOS transmit-receive switch; antenna port; frequency 57 GHz to 66 GHz; insertion loss; loss -9.2 dB to -10.5 dB; return loss; single-pole double-throw transmit-receive switch; size 130 nm; voltage 1.2 V; Broadband antennas; CMOS process; Communication switching; Insertion loss; MOSFETs; Network topology; Radio frequency; Substrates; Switches; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380985

Filename

4266533