A 26 to 40GHz Wideband SiGe Balanced Power Amplifier IC

Author

Chang, Michael ; Rebeiz, Gabriel M.

Author_Institution

Univ. of Michigan, Ann Arbor

fYear

2007

fDate

3-5 June 2007

Firstpage

729

Lastpage

732

Abstract

An integrated SiGe PA is presented for wideband applications covering 26 to 40 GHz. No distributed amplifier or negative feedback techniques are employed to achieve wideband performance. The 42% fractional-bandwidth PA has a gain of 13 dB and a saturated output power of 19.4 dBm with 11.2% PAE from 32 to 33 GHz. The output P₁ _dB and P_sat are greater than 15.5 dBm and 17 dBm, respectively, from 26 to 40 GHz. The 1.83 mm² chip consumes 525 mW (375 mA) from a 1.4 V supply.

Keywords

germanium compounds; millimetre wave power amplifiers; silicon compounds; wide band gap semiconductors; wideband amplifiers; frequency 26 GHz to 40 GHz; linear power amplifier; millimeter-wave integrated circuits; wideband SiGe balanced power amplifier IC; Broadband amplifiers; Feeds; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Power amplifiers; Power generation; Power transmission lines; Silicon germanium; Wideband; Ka-band; Power amplifier (PA); linear power amplifier; millimeter-wave (mmW) integrated circuits; silicon germanium (SiGe) HBT; wideband amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380986

Filename

4266534