Title :
A 26 to 40GHz Wideband SiGe Balanced Power Amplifier IC
Author :
Chang, Michael ; Rebeiz, Gabriel M.
Author_Institution :
Univ. of Michigan, Ann Arbor
Abstract :
An integrated SiGe PA is presented for wideband applications covering 26 to 40 GHz. No distributed amplifier or negative feedback techniques are employed to achieve wideband performance. The 42% fractional-bandwidth PA has a gain of 13 dB and a saturated output power of 19.4 dBm with 11.2% PAE from 32 to 33 GHz. The output P1 dB and Psat are greater than 15.5 dBm and 17 dBm, respectively, from 26 to 40 GHz. The 1.83 mm2 chip consumes 525 mW (375 mA) from a 1.4 V supply.
Keywords :
germanium compounds; millimetre wave power amplifiers; silicon compounds; wide band gap semiconductors; wideband amplifiers; frequency 26 GHz to 40 GHz; linear power amplifier; millimeter-wave integrated circuits; wideband SiGe balanced power amplifier IC; Broadband amplifiers; Feeds; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Power amplifiers; Power generation; Power transmission lines; Silicon germanium; Wideband; Ka-band; Power amplifier (PA); linear power amplifier; millimeter-wave (mmW) integrated circuits; silicon germanium (SiGe) HBT; wideband amplifier;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380986
