Title :
A High Dynamic Range CMOS RF Power Amplifier with a Switchable Transformer for Polar Transmitters
Author :
Kim, Younsuk ; Ku, Bon-Hyun ; Park, Changkun ; Lee, Dong Ho ; Hong, Songcheol
Author_Institution :
Samsung Electro-Mech. Co., Ltd., Suwon
Abstract :
A fully integrated CMOS RF power amplifier for a 1.8 GHz band EDGE polar transmitter is presented. It is implemented with 0.18-mum CMOS process. The output power is 33.4 ~ 33.5 dBm and the power added efficiency is 39 ~ 41 percent when the frequency varies from 1.71 to 1.91 GHz. The dynamic range is increased by 12 dB with the use of the proposed switchable transformer, which meets the EDGE dynamic range requirement of 37 dB when the supply voltage changes from 0.8 to 3.3 V.
Keywords :
cellular radio; power amplifiers; EDGE polar transmitter; frequency 1.71 GHz to 1.91 GHz; frequency 1.8 GHz; high dynamic range CMOS RF power amplifier; switchable transformer; voltage 0.8 V to 3.3 V; Dynamic range; High power amplifiers; Impedance; Linearity; Power amplifiers; Power generation; Radio frequency; Radio transmitters; Radiofrequency amplifiers; Switching circuits; CMOS integrated circuits; MMIC power amplifiers; MOSFET power amplifiers; UHF power amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380988
