• DocumentCode
    2989291
  • Title

    Low-Capacitance SCR With Waffle Layout Structure for On-Chip ESD Protection in RF ICs

  • Author

    Lin, Chun-Yu ; Ker, Ming-Dou

  • Author_Institution
    Nat. Chiao-Tung Univ., Hsinchu
  • fYear
    2007
  • fDate
    3-5 June 2007
  • Firstpage
    749
  • Lastpage
    752
  • Abstract
    Silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs.
  • Keywords
    CMOS integrated circuits; capacitance; electrostatic discharge; integrated circuit layout; radiofrequency integrated circuits; rectifiers; CMOS technology; ESD robustness; RF circuit performance; RFIC; low-capacitance SCR; on-chip ESD protection device; parasitic capacitance; silicon-controlled rectifier; waffle layout structure; CMOS technology; Circuit optimization; Degradation; Electrostatic discharge; Parasitic capacitance; Protection; Radio frequency; Rectifiers; Robustness; Thyristors; Electrostatic discharges (ESD); radio-frequency integrated circuit (RF IC); silicon-controlled rectifier (SCR);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    1529-2517
  • Print_ISBN
    1-4244-0530-0
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2007.380991
  • Filename
    4266539