DocumentCode
2989291
Title
Low-Capacitance SCR With Waffle Layout Structure for On-Chip ESD Protection in RF ICs
Author
Lin, Chun-Yu ; Ker, Ming-Dou
Author_Institution
Nat. Chiao-Tung Univ., Hsinchu
fYear
2007
fDate
3-5 June 2007
Firstpage
749
Lastpage
752
Abstract
Silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs.
Keywords
CMOS integrated circuits; capacitance; electrostatic discharge; integrated circuit layout; radiofrequency integrated circuits; rectifiers; CMOS technology; ESD robustness; RF circuit performance; RFIC; low-capacitance SCR; on-chip ESD protection device; parasitic capacitance; silicon-controlled rectifier; waffle layout structure; CMOS technology; Circuit optimization; Degradation; Electrostatic discharge; Parasitic capacitance; Protection; Radio frequency; Rectifiers; Robustness; Thyristors; Electrostatic discharges (ESD); radio-frequency integrated circuit (RF IC); silicon-controlled rectifier (SCR);
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location
Honolulu, HI
ISSN
1529-2517
Print_ISBN
1-4244-0530-0
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2007.380991
Filename
4266539
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