Broadband Noise Modeling of SiGe HBT under Cryogenic Temperatures

Author

Banerjee, Bhaskar ; Venkataraman, Sunitha ; Lee, Chang-Ho ; Laskar, Joy

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

3-5 June 2007

Firstpage

765

Lastpage

768

Abstract

In this paper, we present a detailed analysis and modeling of the broadband noise parameters for a 200 GHz SiGe HBT technology under cryogenic temperatures. A transit time based noise model is used to accurately predict the fundamental noise parameters using the measured Y-parameters of the device at 85 K. Analytical equations are presented which represent the noise parameters as a function of device parameters and temperature. The frequency and bias dependence of the noise parameters are modeled using this "transit-time" model at room temperature (300 K) and 85 K.

Keywords

Ge-Si alloys; cryogenic electronics; cryogenics; elemental semiconductors; heterojunction bipolar transistors; semiconductor device noise; shot noise; SiGe HBT technology; bias dependence; broadband noise modeling; broadband noise parameters; cryogenic temperatures; frequency dependence; Cryogenics; Equations; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Predictive models; Silicon germanium; Temperature; Time measurement; Bipolar technology; SiGe HBT; cryogenics; noise; noise figure; noise model; noisy two-port; shot noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380995

Filename

4266543