DocumentCode
2989540
Title
Implementation of 6kV ESD Protection for a 17GHz LNA in 130nm SiGeC BiCMOS
Author
Linten, D. ; Natarajan, M.I. ; Thijs, S. ; Van Huylenbroeck, S. ; Xiao, S. ; Carchon, G. ; Decoutere, S. ; Sawada, M. ; Hasebe, T. ; Groeseneken, G.
Author_Institution
IMEC vzw, Leuven
fYear
2006
fDate
Oct. 29 2006-Dec. 1 2006
Abstract
A systematic implementation of ESD protection for a 17 GHz LNA in 130 nm SiGeC BiCMOS technology is presented. The ability to achieve pre-silicon ESD reliability confidence is demonstrated through the comparison of HBM ESD simulations and measurements on the circuit. The inductor-based ESD protection methodology achieves more than 6 kV HBM ESD robustness for the LNA, the highest ever reported in a similar technology.
Keywords
BIMOS integrated circuits; electrostatic discharge; inductors; nanoelectronics; BiCMOS; HBM ESD simulations; LNA; inductor-based ESD protection; presilicon ESD reliability; size 130 nm; BiCMOS integrated circuits; CMOS technology; Consumer electronics; Electrostatic discharge; Heterojunction bipolar transistors; Noise robustness; Protection; Radio frequency; Thin film inductors; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
0-7803-9730-4
Electronic_ISBN
0-7803-9731-2
Type
conf
DOI
10.1109/SMELEC.2006.381007
Filename
4266557
Link To Document