The feasibility of CoSi/sub 2/, TiW and TiW (N) as local interconnection in a self-aligned CoSi/sub 2/ technology

Author

Wolters, Rob ; Van den hove, Luc

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1988

fDate

13-14 June 1988

Firstpage

149

Lastpage

157

Abstract

The feasibility of several materials for use in local interconnection technology in combination with the self-aligned CoSi/sub 2/ process is evaluated. In the self-aligned CoSi/sub 2/ process, CoSi/sub 2/ straps from Co/a-Si (1:2) bilayer reactions are formed from both substrate Si and the a-Si layer, resulting in an a-Si surface layer. Thermal treatments of Si-CoSi/sub 2/-TiW (10:90) revealed a net Si transport in the TiW top layer at elevated temperatures (750 degrees C). Formation of (Ti/sub 0.24/W/sub 0.76/)Si/sub 2/ and WSi/sub 2/ phases, CoSi/sub 2/ phase integrity, and a net movement of the CoSi/sub 2/ layer into the Si substrate have been observed at temperatures above 750 degrees C. The most viable strap material for a CoSi/sub 2/ self-aligned silicide technology is a reactively sputtered TiW(N) layer because of high-temperature stability and compatibility with present IC processing.<>

Keywords

cobalt compounds; integrated circuit technology; metallisation; titanium alloys; titanium compounds; tungsten alloys; (Ti/sub 0.24/W/sub 0.76/)Si/sub 2/; IC processing; Si-CoSi/sub 2/-TiN; Si-CoSi/sub 2/-TiW; WSi/sub 2/; bilayer reactions; high-temperature stability; local interconnection; phase integrity; selfaligned technology; strap material; substrate Si; thermal treatment; Amorphous magnetic materials; Argon; Conducting materials; Magnetic separation; Radio frequency; Silicidation; Silicides; Sputtering; Temperature; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE

Conference_Location

Santa Clara, CA, USA

Type

conf

DOI

10.1109/VMIC.1988.14187

Filename

14187