• DocumentCode
    2989693
  • Title

    Relation between MOSFET degradation and interface-states generation

  • Author

    Gnenifi, N. ; Djahli, F. ; Mayouf, A.

  • Author_Institution
    Dept. of Electron., Univ. Abbas Ferhat, Setif, Algeria
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    936
  • Abstract
    We have developed a charge-pumping model, implemented in SPICE3F4. The charge pumping current plotted versus the different levels of the polarization of grille can provide a lot of interesting results concerning parameters of the T.MOS study. The simulated results are in a good agreement with recent and different experimental results
  • Keywords
    MOSFET; SPICE; interface states; semiconductor device models; semiconductor device reliability; MOSFET degradation; SPICE3F4; T.MOS study; charge-pumping model; grille polarization; interface-states generation; Charge pumps; Degradation; Electron traps; Interface states; MOSFET circuits; Polarization; Signal resolution; Spontaneous emission; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on
  • Conference_Location
    Jounieh
  • Print_ISBN
    0-7803-6542-9
  • Type

    conf

  • DOI
    10.1109/ICECS.2000.913030
  • Filename
    913030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2989693