Title :
Relation between MOSFET degradation and interface-states generation
Author :
Gnenifi, N. ; Djahli, F. ; Mayouf, A.
Author_Institution :
Dept. of Electron., Univ. Abbas Ferhat, Setif, Algeria
Abstract :
We have developed a charge-pumping model, implemented in SPICE3F4. The charge pumping current plotted versus the different levels of the polarization of grille can provide a lot of interesting results concerning parameters of the T.MOS study. The simulated results are in a good agreement with recent and different experimental results
Keywords :
MOSFET; SPICE; interface states; semiconductor device models; semiconductor device reliability; MOSFET degradation; SPICE3F4; T.MOS study; charge-pumping model; grille polarization; interface-states generation; Charge pumps; Degradation; Electron traps; Interface states; MOSFET circuits; Polarization; Signal resolution; Spontaneous emission; Testing; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on
Conference_Location :
Jounieh
Print_ISBN :
0-7803-6542-9
DOI :
10.1109/ICECS.2000.913030
