Title :
Performance Improvement of OTFTs using Double Layer Insulator
Author :
Park, Dong-Wook ; Lee, Cheon An ; Jung, Keum-Dong ; Kim, Byeong-Ju ; Park, Byung-Gook ; Shin, Hyungcheol ; Lee, Jong Duk
Author_Institution :
Seoul Nat. Univ., Seoul
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
Organic thin-film transistors (OTFTs) with improved performance are fabricated using SiO2-cross-linked PVA double layer insulator. The improved field- effect mobility, on-current, off-current, on/off ratio, and subthreshold slope are 0.12 cm2/V-sec, 9.2times10-6 Aring, 2times10-12 Aring, 4.6times106, and 0.4 V/dec, respectively. In addition, a negligible threshold voltage shift is observed in the device. The performance improvements are attributed to good leakage characteristic of SiO2 and high-k characteristic of cross- linked PVA. Based on the proposed OTFTs, an organic inverter working as high as 1 kHz is implemented.
Keywords :
carrier mobility; field effect transistors; high-k dielectric thin films; leakage currents; organic semiconductors; polymer films; silicon compounds; thin film transistors; SiO2 leakage characteristics; SiO2-cross-linked PVA double layer insulator; field- effect mobility; high-k characteristic cross- linked PVA; organic inverter; organic thin-film transistor fabrication; threshold voltage shift; Dielectrics and electrical insulation; Fabrication; High-K gate dielectrics; Hysteresis; Lithography; Organic materials; Organic thin film transistors; Pentacene; Substrates; Thin film transistors;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.381017
