Parallel gap bonding mechanism of joint formation for thin-film metallization

Author

Wang, Chenxi ; Wang, Chunqing

Author_Institution

State Key Lab. of Adv. Welding Production Technol., Harbin Inst. of Technol., China

fYear

2003

fDate

28-30 Oct. 2003

Firstpage

184

Lastpage

186

Abstract

A parallel gap bonding mechanism for joint formation of Ni/NiCr joints was described in this paper. A 2D thermal conduction model was proposed-to calculate the position of the top temperature. When the gap of two electrodes is greater than the critical gap, the top temperature position is at the middle of the electrodes. Although this temperature is higher than the melting point of Ni or NiCr alloy, there are no nuggets in the middle. The formation of the joint depends on diffusion of atoms below the two electrodes. For a Ag/SnCu joint, the temperature distribution is equally corresponding. The area of atom diffusion for the Ag/SnCu joint was larger than that of the Ni/NiCr joint.

Keywords

bonding processes; chromium alloys; copper alloys; diffusion; heat conduction; metallic thin films; metallisation; nickel; nickel alloys; silver; temperature distribution; tin alloys; welding electrodes; 2D thermal conduction model; Ag-SnCu; Ni-NiCr; atomic diffusion; critical electrode gap; joint formation mechanism; metal melting point; parallel gap bonding mechanism; temperature distribution; thin-film metallization; Bonding forces; Electrodes; Environmentally friendly manufacturing techniques; Lead; Metallization; Microelectronics; Pollution; Soldering; Thermal conductivity; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on

Conference_Location

Shanghai, China

Print_ISBN

0-7803-8168-8

Type

conf

DOI

10.1109/EPTC.2003.1298721

Filename

1298721