Title :
Parallel gap bonding mechanism of joint formation for thin-film metallization
Author :
Wang, Chenxi ; Wang, Chunqing
Author_Institution :
State Key Lab. of Adv. Welding Production Technol., Harbin Inst. of Technol., China
Abstract :
A parallel gap bonding mechanism for joint formation of Ni/NiCr joints was described in this paper. A 2D thermal conduction model was proposed-to calculate the position of the top temperature. When the gap of two electrodes is greater than the critical gap, the top temperature position is at the middle of the electrodes. Although this temperature is higher than the melting point of Ni or NiCr alloy, there are no nuggets in the middle. The formation of the joint depends on diffusion of atoms below the two electrodes. For a Ag/SnCu joint, the temperature distribution is equally corresponding. The area of atom diffusion for the Ag/SnCu joint was larger than that of the Ni/NiCr joint.
Keywords :
bonding processes; chromium alloys; copper alloys; diffusion; heat conduction; metallic thin films; metallisation; nickel; nickel alloys; silver; temperature distribution; tin alloys; welding electrodes; 2D thermal conduction model; Ag-SnCu; Ni-NiCr; atomic diffusion; critical electrode gap; joint formation mechanism; metal melting point; parallel gap bonding mechanism; temperature distribution; thin-film metallization; Bonding forces; Electrodes; Environmentally friendly manufacturing techniques; Lead; Metallization; Microelectronics; Pollution; Soldering; Thermal conductivity; Transistors;
Conference_Titel :
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location :
Shanghai, China
Print_ISBN :
0-7803-8168-8
DOI :
10.1109/EPTC.2003.1298721
