Title :
Research on wafer scale bonding method based on gold-tin eutectic solders [MEMS packaging]
Author :
Chen, Sihai ; Chen, Mingxiang ; Yi, Xinjian ; Zhang, Honghai ; Liu, Sheng
Author_Institution :
Inst. of Microsystems, Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
This paper presents the preliminary results for an on-going program in wafer-level MEMS packaging. In this particular paper, two classes of samples by reactive ion sputtering technique were presented. The first one was first sputtered with nickel/chromium (Ni/Cr) alloy and then sputtered with gold (Au) metal as bonding material; the second one was sputtered with Cr, tin (Sn) and Au respectively as bonding material. The bonding of the former sample based on Ni/Cr and Au material heating failed in most areas of the wafers. The eutectic bonding experiment of the later sample, based on Cr, Sn and Au material heating by a global heating method was completed in an annealing oven at a temperature of about 350/spl deg/C, and the heating time was three minutes. The testing results showed the eutectic bonding of Au-Sn by global heating was successful in most areas.
Keywords :
chromium; chromium alloys; electronics packaging; gold; micromechanical devices; nickel alloys; process heating; solders; sputter deposition; tin; wafer bonding; 350 degC; Cr-Sn-Au-NiCr; MEMS packaging; NiCr-Au; annealing oven temperature; bonding material heating; eutectic bonding; global heating method; gold-tin eutectic solders; reactive ion sputtering technique; wafer scale bonding method; Chromium; Gold; Heating; Inorganic materials; Micromechanical devices; Nickel; Packaging; Tin; Wafer bonding; Wafer scale integration;
Conference_Titel :
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location :
Shanghai, China
Print_ISBN :
0-7803-8168-8
DOI :
10.1109/EPTC.2003.1298722
