DocumentCode
2989901
Title
GaAs devices and circuits for terahertz applications
Author
Crowe, T.W. ; Weikle, R.M. ; Hesler, J.L.
Author_Institution
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Volume
3
fYear
1999
fDate
13-19 June 1999
Firstpage
929
Abstract
This paper reviews terahertz diode technology with regard to mixers, multipliers and sideband generation. Emphasis is placed on recent results and the improvements that are needed to ensure that this technology can not only meet the expanding needs of scientific researchers, but also be extended to future military and commercial applications.
Keywords
III-V semiconductors; gallium arsenide; military equipment; multiplying circuits; submillimetre wave diodes; submillimetre wave generation; submillimetre wave mixers; GaAs; commercial applications; diode technology; military applications; mixers; multipliers; sideband generation; terahertz applications; Chemical technology; Circuits; Frequency; Gallium arsenide; Parasitic capacitance; Radio astronomy; Schottky barriers; Schottky diodes; Space technology; Submillimeter wave technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779538
Filename
779538
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