Title :
GaAs devices and circuits for terahertz applications
Author :
Crowe, T.W. ; Weikle, R.M. ; Hesler, J.L.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Abstract :
This paper reviews terahertz diode technology with regard to mixers, multipliers and sideband generation. Emphasis is placed on recent results and the improvements that are needed to ensure that this technology can not only meet the expanding needs of scientific researchers, but also be extended to future military and commercial applications.
Keywords :
III-V semiconductors; gallium arsenide; military equipment; multiplying circuits; submillimetre wave diodes; submillimetre wave generation; submillimetre wave mixers; GaAs; commercial applications; diode technology; military applications; mixers; multipliers; sideband generation; terahertz applications; Chemical technology; Circuits; Frequency; Gallium arsenide; Parasitic capacitance; Radio astronomy; Schottky barriers; Schottky diodes; Space technology; Submillimeter wave technology;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779538
