Title :
Terahertz applications of plasma wave electronics
Author :
Shur, M.S. ; Jian-Qiang Lu ; Dyaakonov, M.I.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Plasma waves propagating in a short-channel High Electron Mobility Transistor (HEMT) have a resonant response to electromagnetic radiation. Experimentally, we have demonstrated the detection of the terahertz radiation by an AlGaAs/GaAs HEMT. In this paper, we review recent theoretical and experimental results dealing with plasma waves in HEMTs and their applications for sources and detectors operating in millimeter and submillimeter range.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor plasma; submillimetre wave detectors; submillimetre wave transistors; AlGaAs-GaAs; plasma wave electronics; short-channel high electron mobility transistor; terahertz radiation detector; Electrons; Equations; FETs; Frequency; HEMTs; Hydrodynamics; Plasma waves; Radiation detectors; Resonance; Submillimeter wave propagation;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779540
