DocumentCode
2989990
Title
Terahertz applications of plasma wave electronics
Author
Shur, M.S. ; Jian-Qiang Lu ; Dyaakonov, M.I.
Author_Institution
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
3
fYear
1999
fDate
13-19 June 1999
Firstpage
937
Abstract
Plasma waves propagating in a short-channel High Electron Mobility Transistor (HEMT) have a resonant response to electromagnetic radiation. Experimentally, we have demonstrated the detection of the terahertz radiation by an AlGaAs/GaAs HEMT. In this paper, we review recent theoretical and experimental results dealing with plasma waves in HEMTs and their applications for sources and detectors operating in millimeter and submillimeter range.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor plasma; submillimetre wave detectors; submillimetre wave transistors; AlGaAs-GaAs; plasma wave electronics; short-channel high electron mobility transistor; terahertz radiation detector; Electrons; Equations; FETs; Frequency; HEMTs; Hydrodynamics; Plasma waves; Radiation detectors; Resonance; Submillimeter wave propagation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779540
Filename
779540
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