• DocumentCode
    2990120
  • Title

    Significant reduction of recovery time in semiconductor optical amplifier using p type modulation doped MQW

  • Author

    Zhang, L. ; Kang, I. ; Bhardwaj, A. ; Sauer, N. ; Cabot, S. ; Jaques, J. ; Neilson, D.T.

  • Author_Institution
    Bell Laboratories, Lucent Technology, 791 Holmdel-Keyport Road, Holmdel, NJ 07733, USA, Email: lmz@lucent.com
  • fYear
    2006
  • fDate
    24-28 Sept. 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The effect of p-type doping of the barriers of multiple quantum well semiconductor optical amplifiers is shown to significantly reduce the gain and carrier recovery times with phase recovery times as short as 11ps.
  • Keywords
    Epitaxial layers; Gain measurement; Indium phosphide; Laser theory; Optical wavelength conversion; Phase measurement; Quantum well devices; Semiconductor optical amplifiers; Wavelength measurement; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communications, 2006. ECOC 2006. European Conference on
  • Conference_Location
    Cannes, France
  • Print_ISBN
    978-2-912328-39-7
  • Electronic_ISBN
    978-2-912328-39-7
  • Type

    conf

  • DOI
    10.1109/ECOC.2006.4801115
  • Filename
    4801115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2990120