Title :
Gas Sensing Properties of ZnO:Al Thin Films Prepared by RF Magnetron Sputtering
Author :
Teoh, Lay Gaik ; Chen, Hong Ming ; Su, Yen Hsun ; Lai, Wei Hao ; Chou, Shih Min ; Hon, Min Hsiung
Author_Institution :
Nat. Pingtung Univ. of Sci. & Technol., Pingtung
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ~20 at an operating temperature of 250square. The high sensitivity, fast recovery, and reliability suggest that ZnO:Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.
Keywords :
II-VI semiconductors; X-ray diffraction; aluminium; gas sensors; scanning electron microscopy; semiconductor thin films; sputter deposition; zinc compounds; RF magnetron sputtering; SEM; Si; XRD; ZnO:Al; electrical properties; ethanol vapor gas sensing; high sensitivity; interdigitated electrodes; reliability; temperature 250 C; thin films; Electrodes; Ethanol; Magnetic analysis; Magnetic properties; Radio frequency; Semiconductor thin films; Sputtering; Substrates; Temperature sensors; X-ray scattering;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.381036
