Weak localization in p-type inversion channels on silicon

Experimental results on the magnetoresistance in p-type inversion channels on the (111) silicon surface are presented. Experiments were conducted at temperature of 4.2 °K, magnetic field magnitudes of up to 3 Tesla and gate voltages on the MOS-structures generating hole concentration of Γ_p≅10¹³ cm^-2 in inversion channel. Having compared theory with the experimental results for B_⊥ we have obtained that (0.5+β)≅0.501, L_φ≅6.1·10^-8 m, L_φ^*≅4.8·10^-9 m, τ_φ/τ_φ^*≅80. In the case of B_|| have obtained that up to B_||=2 T, τ_φ/τ_B||ˇ ≈0.6·B² and τ_φ^*/τ_B||ˇ≈20