Title :
Low-field mobility and piezoresistivity of holes in germanium and silicon
Author :
Dragunov, V.P. ; Boldyrev, D.V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
A theoretical calculation of the low-field mobility and piezoresistance coefficients of holes in germanium and silicon is carried out incorporating all relevant details of the band structure. The scattering have been limited to acoustic and optical phonons and ionized-impurity and is described by the deformation potentials a, b, d and d0. Values of the piezoresistance coefficients are calculated using matrix 6×6 expressions for the strain dependent energy-wave vector relations of the valence bands and the known deformation potentials. The calculated values of the first-order piezoresistance coefficients are found to agree fairly well with the experimental data
Keywords :
electron-phonon interactions; elemental semiconductors; germanium; hole mobility; impurity scattering; piezoresistance; silicon; Ge; Si; acoustic phonon scattering; band structure; deformation potential; germanium; hole mobility; ionized impurity scattering; optical phonon scattering; piezoresistance coefficient; silicon; valence band; Acoustic scattering; Conductivity; Crystals; Germanium; Laser sintering; Optical scattering; Phonons; Photonic band gap; Piezoresistance; Silicon;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-5903-8
DOI :
10.1109/APEIE.2000.913077
