DocumentCode :
2990342
Title :
Evolution of relief of asperited polycrystalline silicon surface in the process of thermal oxidation
Author :
Perov, G.V. ; Salman, E.G. ; Ignatov, A.N.
Author_Institution :
Siberia State Univ. of Tech. & Inf., Russia
fYear :
2000
fDate :
2000
Firstpage :
27
Lastpage :
30
Abstract :
A simple phenomenological model of changing asperity surface, in the process of thermal oxidation of polycrystalline silicon, is examined. This allows to prognosticate and consequently deliberately change electrical characteristics of the dielectric layer
Keywords :
elemental semiconductors; oxidation; silicon; surface topography; Si; changing asperity surface; dielectric layer; electrical characteristics; polysilicon surface; simple phenomenological model; surface relief evolution; thermal oxidation; Aggregates; Conductivity; Dielectric films; Electric variables; Ellipsoids; Oxidation; Silicon compounds; Temperature; Thermal factors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-5903-8
Type :
conf
DOI :
10.1109/APEIE.2000.913080
Filename :
913080
Link To Document :
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