Title :
The formation and growth of intermetallic compounds between Sn-3.5Ag lead-free solder and Cu substrate
Author :
Daquan, Yu ; Lilei, Duan ; Jie, Zhao ; Lai, Wang
Author_Institution :
Dept. of Mater. Eng., Dalian Univ. of Technol., China
Abstract :
A new method was used to investigate the formation and growth of intermetallic compound (IMC hereafter) formed at the interface between Sn-3.5Ag lead free solder and the Cu substrate. Solder joints were prepared by Memisco (wetting balance, model ST50) at 250/spl deg/C with soldering time of 10sec, 30sec, 60sec and 90sec. Experimental data for IMC growth between copper and Sn-3.5Ag solder during soldering exhibit a t/sup 1/3/ dependence on time. The results indicate that during soldering up to 90 sec, grain boundary diffusion is the predominant mechanism for transport through the layer. During aging at 170/spl deg/C up to 1000h, the columnar morphology of IMCs changed to a more planer type. The growth behavior of IMC layers obeys t/sup 1/2/ equation /spl Delta/y/sub i/ (t) = k/sub i/t/sup 1/2/. Here, /spl Delta/y/sub i/ is the growth thickness of IMC during aging; k/sub i/ is the coefficient standing for the square root of the diffusivity at the aging temperature and t is the aging time. This equation reveals a diffusion-controlled mechanism during aging.
Keywords :
ageing; chemical interdiffusion; copper; electronics packaging; grain boundary diffusion; lead bonding; reflow soldering; silver alloys; tin alloys; 250 C; SnAg-Cu; aging; columnar morphology; copper substrate; diffusion-controlled mechanism; electronic packaging; grain boundary diffusion; intermetallic compounds; lead-free solder; planar morphology; ripening process; solder joint reliability; wetting balance; Aging; Copper; Environmentally friendly manufacturing techniques; Equations; Grain boundaries; Intermetallic; Lead compounds; Metalworking machines; Morphology; Soldering;
Conference_Titel :
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location :
Shanghai, China
Print_ISBN :
0-7803-8168-8
DOI :
10.1109/EPTC.2003.1298751