Inductively-Tuned K- Band Distributed MEMS Phase Shifter

This paper presents a new method in the MEMS phase shifters using inductors and inline MEMS bridges. There is LC serial and parallel configuration in the un-actuated and actuated position respectively. The resonance frequencies due to these configurations causes an increasing in impedance change and then increasing in the phase shift in the K- band frequency range. For a unit cell at 20 GHz the un-actuated simulation results in a reflection coefficient -26.5 dB, an insertion loss of -0.185 dB and the phase constant of -23.5 degree. The actuated simulation results in a reflection coefficient -13.5 dB, an insertion loss of -0.18 dB and the phase constant of -6 degree. The spacing in the proposed structures is S=250e-6. This spacing is smaller than similar phase shifters using only capacitors at 20 GHz. Then the governing equations for the impedance, Bragg frequency and the periodic spacing between the bridges are derived.