DocumentCode
2990451
Title
The model of process of low-temperature plasmachemical treatment of units of CRPhED
Author
Lisitsyna, L.I.
Author_Institution
Novosibirsk State Tech. Univ., Russia
fYear
2000
fDate
2000
Firstpage
47
Lastpage
49
Abstract
The application of the model of plasma gap for process of low-temperature plasmachemical treatment of units of cathode-ray and photoelectronic devices (CRPhED) is considered. The model allows to consider potential distribution in the gap as similar to potential distribution without plasma. The model gives the possibility to calculate potential on the electrodes, necessary for the quality cleaning of workpieces
Keywords
cathode-ray tubes; electrodes; electron tube manufacture; phototubes; plasma materials processing; surface cleaning; CRPhED units; cathode-ray and photoelectronic devices; electrode potential; low-temperature plasmachemical treatment; plasma gap; potential distribution; process model; workpiece cleaning; Capacitors; Dielectric materials; Electrodes; Electron optics; Electron tubes; Hafnium; Inductors; Plasma materials processing; Production systems; Vacuum systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of
Conference_Location
Novosibirsk
Print_ISBN
0-7803-5903-8
Type
conf
DOI
10.1109/APEIE.2000.913086
Filename
913086
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