Uniformity Study of GaAs-based Vertical-Cavity Surface-Emitting Laser Epiwafer Grown by MOCVD Technique

Author

Alias, Mohd Sharizal ; Leisher, Paul O. ; Choquette, Kent D. ; Anuar, Khairul ; Siriani, Dominic ; Mitani, Sufian ; Razman Y, M. ; Fatah A.M, A.

Author_Institution

Telekom R&D, Serdang

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

223

Lastpage

226

Abstract

In this paper, a highly uniform 850 nm VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.

Keywords

Fabry-Perot resonators; III-V semiconductors; MOCVD; gallium arsenide; laser cavity resonators; optical fabrication; quantum well lasers; semiconductor quantum wells; surface emitting lasers; Fabry-Perot cavity resonance; GaAs; MOCVD technique; VCSEL epiwafer; VCSEL quantum wells; device fabrication; vertical-cavity surface- emitting laser; wavelength 846.5 nm; wavelength 850 nm; Distributed Bragg reflectors; Doping; Epitaxial layers; Gallium arsenide; MOCVD; Mirrors; Molecular beam epitaxial growth; Semiconductor materials; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.381052

Filename

4266602