Electro-Opto Characteristics of 850 nm Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Author

Alias, Mohd Sharizal ; Leisher, Paul O. ; Choquette, Kent D. ; Anuar, Khairul ; Siriani, Dominic ; Mitani, Sufian ; Razman, Y. Mohd ; Abdul Fatah, A.M.

Author_Institution

UPM-MTDC, Serdang

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

227

Lastpage

230

Abstract

In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 mum. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.

Keywords

MOCVD; electro-optical devices; laser cavity resonators; surface emitting lasers; MOCVD; VCSEL; electroopto characteristics; oxide aperture sizes; oxide-confined vertical-cavity surface-emitting lasers; threshold current; wavelength 850 nm; Apertures; Distributed Bragg reflectors; Etching; Mirrors; Optical resonators; Optical surface waves; Oxidation; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.381053

Filename

4266603