Laser tomography of the lifetime and diffusion length of charge carriers in semiconductor silicon ingots

Author

Akhmetov, V.D. ; Fateev, N.V.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2000

fDate

2000

Firstpage

68

Lastpage

71

Abstract

A nondestructive method for estimating quality of single-crystal Si ingots is proposed. The method provides a three-dimensional pattern of the lifetime and diffusion length of charge carriers inside Si ingots up to 300 mm in diameter and 1 m in length. The method employs laser-induced photoinjection of charge carriers followed by laser-assisted monitoring of their spatial distributions and time evolution in any part of the ingot

Keywords

carrier lifetime; elemental semiconductors; optical tomography; silicon; Si; charge carrier diffusion length; charge carrier lifetime; laser tomography; nondestructive measurement; nonequilibrium carrier photoinjection; semiconductor single crystal; silicon ingot; three-dimensional imaging; Charge carriers; Laser beams; Laser excitation; Optical pulse generation; Optical surface waves; Semiconductor lasers; Silicon; Space vector pulse width modulation; Surface emitting lasers; Tomography;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-5903-8

Type

conf

DOI

10.1109/APEIE.2000.913092

Filename

913092