Numerical Modeling of a Diffusion-Based In0.53Ga0.47As Lateral PIN Photodiode for 10 Gbit/s Optical Communication Systems

A novel purely diffusion-based In_0.53Ga_0.47As lateral PIN photodiode was successfully modeled. Device dimensions are 12 times 1.8 mum² with electrode spacing of 1.5 mum and width of 1 mum. The effective intrinsic region width is ~0.2 mum. The 2D modeled device achieved responsivity of 0.765 AAV and -3 dB frequency of 10.9 GHz and is able to cater for 10 Gbit/s optical communication system networks. The device was biased at -2V and illuminated with a 5 W/cm² optical spot power at a wavelength of 1.55 mum. SNR ratio was recorded at 31.2 dB.