DocumentCode :
2990714
Title :
GaN electronic devices for future systems
Author :
Binari, S.C.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
3
fYear :
1999
fDate :
13-19 June 1999
Firstpage :
1081
Abstract :
There is an extensive effort to develop GaN and the related alloys for electronic device applications. The primary focus is the development of microwave power devices, and in this area, AlGaN/GaN HEMTs have demonstrated record output power densities. The motivation for pursuing GaN for microwave power applications and the current status of the GaN electronic device technology are presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; GaN electronic device; microwave power transistor; Aluminum gallium nitride; Electric breakdown; Epitaxial layers; Gallium nitride; Gold; HEMTs; MODFETs; Metallization; Microwave devices; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
Type :
conf
DOI :
10.1109/MWSYM.1999.779575
Filename :
779575
Link To Document :
بازگشت