Title :
Developments of long-wavelength VCSELs
Author_Institution :
Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne
Abstract :
In this paper, significant progress in long-wavelength VCSELs technology has been achieved in recent years, mostly thanks to the use of high gain InP/InAlGaAs QW active regions and the implementation of intra-cavity contacting using tunnel junctions. The recent demonstrations of high single mode output powers (as high as 2.2 mW up to 85deg C), simultaneously with low power consumption, makes these devices an attractive alternative to traditional distributed feedback lasers in applications requiring low cost, highly integrable light sources.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; InP-InAlGaAs; InP/InAlGaAs QW; distributed feedback lasers; intra-cavity contacting; light sources; long-wavelength VCSEL technology; power 2.2 mW; tunnel junctions; vertical cavity surface emitting lasers; Costs; Distributed feedback devices; Energy consumption; Indium phosphide; Laser applications; Laser feedback; Laser modes; Power generation; Power lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4635979
