Title :
Large aperture 850 nm VCSEL operating at 28 Gbit/s
Author :
Westbergh, P. ; Gustavsson, J.S. ; Haglund, Å ; Larsson, A.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Abstract :
We report on large aperture, oxide-confined VCSELs at 850 nm with modulation bandwidths in excess of 20 GHz and demonstrate large-signal modulation up to 28 Gbit/s at a bias current density of only 10 kA/cm2.
Keywords :
current density; laser cavity resonators; optical modulation; quantum well lasers; surface emitting lasers; bias current density; bit rate 28 Gbit/s; large aperture; large-signal modulation; oxide-confined VCSEL; wavelength 850 nm; Apertures; Bandwidth; Bit rate; Current density; Digital modulation; Optical modulation; Photonics; Thermal resistance; Vertical cavity surface emitting lasers; Voltage;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4635982
