Title :
0.2 cc HBT power amplifier module with 40% power-added efficiency for 1.95 GHz wide-band CDMA cellular phones
Author :
Miyazawa, N. ; Itoh, H. ; Nakasha, Y. ; Iwai, T. ; Miyashita, T. ; Ohara, S. ; Joshin, K.
Author_Institution :
Fujitsu Quantum Devices Ltd., Kanagawa, Japan
Abstract :
This paper is the first to report a high efficiency 0.2 cc power amplifier module for Wide-band CDMA (W-CDMA) cellular phones. The module achieves power-added efficiency (PAE) of 40% and adjacent channel leakage power (ACP) of -40.8 dBc at an output power level of 28 dBm with 4.096 MHz QPSK modulation.
Keywords :
III-V semiconductors; UHF bipolar transistors; UHF integrated circuits; UHF power amplifiers; cellular radio; code division multiple access; gallium arsenide; gallium compounds; heterojunction bipolar transistors; hybrid integrated circuits; indium compounds; modules; power bipolar transistors; telephone sets; 1.95 GHz; 40 percent; HBT power amplifier module; InGaP-GaAs; QPSK modulation; adjacent channel leakage power; power-added efficiency; wideband CDMA cellular phones; Broadband amplifiers; Circuits; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; Multiaccess communication; Power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779579
