Title :
1.3 μm InGaAlAs/InP VCSEL for 10G Ethernet
Author :
Hofmann, W. ; Ortsiefer, M. ; Rönneberg, E. ; Neumeyr, C. ; Böhm, G. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching
Abstract :
1.3 mum InGaAlAs/InP VCSELs for 10G Ethernet solutions are presented. High modulation bandwidth and error-free data transmission at 10.3 Gb/s up to 75degC over 10 km of SMF is demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical fibre LAN; optical modulation; optical transmitters; semiconductor lasers; surface emitting lasers; Ethernet; InGaAlAs-InP; VCSEL; bit rate 10.3 Gbit/s; distance 10 km; error-free data transmission; modulation bandwidth; single mode fiber; vertical-cavity surface-emitting lasers; wavelength 1.3 mum; Bandwidth; Bit error rate; Data communication; Ethernet networks; Indium phosphide; Optical devices; Optical fiber communication; Optical transmitters; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4635984
