• DocumentCode
    2990906
  • Title

    The study on electro-physical properties of sandwich structure based on fullerene films

  • Author

    Berdinsky, A.S. ; Shevtsov, Yu.V. ; Saranchin, Yu.A. ; Rubin, S.V. ; Shubin, Yu.V. ; Ayupov, B.M. ; Fink, D. ; Chadderton, L.T. ; Lee, J.H.

  • Author_Institution
    Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    151
  • Lastpage
    156
  • Abstract
    We report the technology of sandwich structure based on fullerene films and experimental results in research of optical and conductivity properties of sandwich samples. The single-crystal of sapphire (100) or silicon was used as a substrate. The sandwich specimens were based on structure M/C60 fullerene film/M (M=Cr,Pd,Ag,Al,Cu). The thickness of fullerene films ~0.2-1.0 μm. The area of C60 film under the top contact ~1 cm2. The specimens have been investigated in IR-spectroscopy, spectra-photometry, ellipsometry and XRD. The measurements of I-V characteristics and research in temperature dependence of conductivity were made as well. It was shown that metals as Cr, Pd, Ag, Al, Cu penetrates easy in fullerene film. It appears that specimens show the large value of conductivity. Silver/C60 structure and other sandwich structures show semiconductor behaviour of conductivity
  • Keywords
    X-ray diffraction; electrical conductivity; fullerenes; infrared spectra; metal-semiconductor-metal structures; semiconductor thin films; C60; I-V characteristics; IR spectroscopy; X-ray diffraction; electrical conductivity; ellipsometry; fullerene film; metal/C60/metal sandwich structure; optical properties; sapphire substrate; semiconductor material; silicon substrate; spectrophotometry; temperature dependence; Chromium; Conductive films; Conductivity measurement; Ellipsometry; Optical films; Sandwich structures; Silicon; Substrates; Temperature dependence; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    0-7803-5903-8
  • Type

    conf

  • DOI
    10.1109/APEIE.2000.913109
  • Filename
    913109