Title :
The study on electro-physical properties of sandwich structure based on fullerene films
Author :
Berdinsky, A.S. ; Shevtsov, Yu.V. ; Saranchin, Yu.A. ; Rubin, S.V. ; Shubin, Yu.V. ; Ayupov, B.M. ; Fink, D. ; Chadderton, L.T. ; Lee, J.H.
Author_Institution :
Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia
Abstract :
We report the technology of sandwich structure based on fullerene films and experimental results in research of optical and conductivity properties of sandwich samples. The single-crystal of sapphire (100) or silicon was used as a substrate. The sandwich specimens were based on structure M/C60 fullerene film/M (M=Cr,Pd,Ag,Al,Cu). The thickness of fullerene films ~0.2-1.0 μm. The area of C60 film under the top contact ~1 cm2. The specimens have been investigated in IR-spectroscopy, spectra-photometry, ellipsometry and XRD. The measurements of I-V characteristics and research in temperature dependence of conductivity were made as well. It was shown that metals as Cr, Pd, Ag, Al, Cu penetrates easy in fullerene film. It appears that specimens show the large value of conductivity. Silver/C60 structure and other sandwich structures show semiconductor behaviour of conductivity
Keywords :
X-ray diffraction; electrical conductivity; fullerenes; infrared spectra; metal-semiconductor-metal structures; semiconductor thin films; C60; I-V characteristics; IR spectroscopy; X-ray diffraction; electrical conductivity; ellipsometry; fullerene film; metal/C60/metal sandwich structure; optical properties; sapphire substrate; semiconductor material; silicon substrate; spectrophotometry; temperature dependence; Chromium; Conductive films; Conductivity measurement; Ellipsometry; Optical films; Sandwich structures; Silicon; Substrates; Temperature dependence; X-ray scattering;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-5903-8
DOI :
10.1109/APEIE.2000.913109
