DocumentCode :
2990912
Title :
40-Gb/s direct modulation of 1.3-μm semi-insulating buried-heterostructure AlGaInAs MQW DFB lasers
Author :
Otsubo, K. ; Matsuda, M. ; Takada, K. ; Okumura, S. ; Ekawa, M. ; Yamamoto, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fYear :
2008
fDate :
14-18 Sept. 2008
Firstpage :
19
Lastpage :
20
Abstract :
High relaxation oscillation frequency of 20.5 GHz and its slope of 3.2 GHz/mA1/2 were obtained by SI-BH 1.3-mum AlGaInAs MQW DFB lasers. Eye-opening up to 50degC was demonstrated as a result of 40-Gb/s direct modulation.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical modulation; optical transmitters; quantum well lasers; AlGaInAs; bit rate 40 Gbit/s; frequency 20.5 GHz; high relaxation oscillation frequency; high-speed optical transmitters; laser direct modulation; multiple-quantum-well laser; semiinsulating buried-heterostructure MQW DFB laser; wavelength 1.3 mum; Epitaxial growth; Extinction ratio; Frequency; Indium phosphide; Laser feedback; Optical transmitters; Quantum well devices; Semiconductor lasers; Temperature dependence; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
Type :
conf
DOI :
10.1109/ISLC.2008.4635988
Filename :
4635988
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2990912
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