40-Gb/s direct modulation of 1.3-μm semi-insulating buried-heterostructure AlGaInAs MQW DFB lasers

Author

Otsubo, K. ; Matsuda, M. ; Takada, K. ; Okumura, S. ; Ekawa, M. ; Yamamoto, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

19

Lastpage

20

Abstract

High relaxation oscillation frequency of 20.5 GHz and its slope of 3.2 GHz/mA^1/2 were obtained by SI-BH 1.3-mum AlGaInAs MQW DFB lasers. Eye-opening up to 50degC was demonstrated as a result of 40-Gb/s direct modulation.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical modulation; optical transmitters; quantum well lasers; AlGaInAs; bit rate 40 Gbit/s; frequency 20.5 GHz; high relaxation oscillation frequency; high-speed optical transmitters; laser direct modulation; multiple-quantum-well laser; semiinsulating buried-heterostructure MQW DFB laser; wavelength 1.3 mum; Epitaxial growth; Extinction ratio; Frequency; Indium phosphide; Laser feedback; Optical transmitters; Quantum well devices; Semiconductor lasers; Temperature dependence; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4635988

Filename

4635988