Title :
InP / AlGaInP short wavelength quantum dot lasers
Author :
Smowton, P.M. ; Al-Ghamdi, M. ; Elliott, S.N. ; Edwards, G. ; Blood, P. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff
Abstract :
We demonstrate MOVPE grown InP q-dot lasers with low threshold current density (195 Acm-2 for 2000 mum long uncoated devices at 300 K) and extended wavelength-coverage (680-740 nm). Modulation p-doping reduces gain saturation in lower confinement structures.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; laser beams; optical fabrication; quantum dot lasers; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; InP-AlGaInP; MOVPE growth; confinement structures; gain saturation; low-threshold current density; p-doping; short wavelength quantum dot lasers; size 2000 mum; temperature 300 K; wavelength 680 nm to 740 nm; wavelength-coverage devices; Electrons; Epitaxial growth; Epitaxial layers; Indium phosphide; Laser theory; Quantum dot lasers; Semiconductor lasers; Temperature dependence; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4635994
