Effect of Rapid Thermal Annealing (RTA) on n-Contact of 980 nm Oxide VCSEL

Author

Anuar, M.S.K. ; Sharizal, A.M. ; Mitani, S.M. ; Razman, Y.M. ; Mat, A.F.A. ; Choudhury, P.K.

Author_Institution

UPM-MTDC, Serdang

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

373

Lastpage

377

Abstract

The paper deals with the development of Ni/Au/Ge/Au ohmic contacts for the fabrication of VCSELs to be operated in the 980 nm of the electromagnetic (EM) spectrum. The VCSEL structures are grown by the process of molecular beam epitaxy (MBE) whereas the contacts are deposited by electron beam evaporator. The n-contact metallization has been performed along with RTA before as well as after the fabrication of the VCSEL structure, and the effect of RTA treatment on the grown VCSEL has been studied in the different cases.

Keywords

germanium; gold; laser cavity resonators; metallisation; molecular beam epitaxial growth; nickel; ohmic contacts; rapid thermal annealing; surface emitting lasers; MBE; Ni-Au-Ge-Au; RTA; electromagnetic spectrum; electron beam evaporator; molecular beam epitaxy; n-contact metallization; ohmic contacts; oxide VCSEL structures; rapid thermal annealing; wavelength 980 nm; Fabrication; Gallium arsenide; Gold; Metallization; Microelectronics; Molecular beam epitaxial growth; Nickel; Ohmic contacts; Rapid thermal annealing; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.381084

Filename

4266634