GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C

Author

Bachmann, A. ; Kashani-Shirazi, K. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

39

Lastpage

40

Abstract

2.33 mum electrically pumped GaSb-based VCSELs with low threshold currents, continuous-wave and single-mode operation up to 50degC are presented. The devices are (electro-) thermally tunable over 10 nm.

Keywords

III-V semiconductors; chemical variables measurement; gallium compounds; gas sensors; laser beams; laser modes; laser tuning; measurement by laser beam; optical pumping; semiconductor lasers; spectrochemical analysis; surface emitting lasers; thermo-optical effects; GaSb; buried tunnel junction; continuous-wave operation; electrically pumped VCSEL; gas-sensing applications; single-mode operation; threshold currents; tunable diode laser absorption spectroscopy; wavelength 2.33 mum; Absorption; Distributed Bragg reflectors; Gas lasers; Light sources; Photonic band gap; Surface emitting lasers; Temperature; Threshold current; Tunable circuits and devices; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4635998

Filename

4635998