• DocumentCode
    2991133
  • Title

    GaSb-based microcavity EP-VCSEL emitting above 2.2 μm in CW regime at RT

  • Author

    Ducanchez, A. ; Cerutti, L. ; Grech, P. ; Genty, F.

  • Author_Institution
    Univ. Montpellier II, Montpellier
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    Monolithic microcavity GaSb-based VCSELs emitting above 2.2 mum in continuous wave regime at room temperature are reported. For 60 mum diameter devices, a density threshold of 1.1 kA/cm2 was measured at 290 K.
  • Keywords
    III-V semiconductors; gallium compounds; integrated optics; laser beams; microcavity lasers; surface emitting lasers; GaSb; continuous wave laser; density threshold; microcavity EP-VCSEL; monolithic microcavity surface emitting laser; size 60 mum; temperature 290 K; temperature 293 K to 298 K; Gas lasers; Indium phosphide; Laser modes; Laser tuning; Microcavities; Reflectivity; Ring lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4635999
  • Filename
    4635999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2991133