Title :
Deep-well 4.8μm -emitting quantum-cascade lasers grown by MOCVD
Author :
D´Souza, Meenakshi ; Shin, J.C. ; Xu, D. ; Kirch, J. ; Mawst, L.J. ; Botez, D. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution :
ECE Dept., Univ. of Wisconsin-Madison, Madison, WI
Abstract :
A novel design for a deep-well InP-based QC-laser structure has been realized using MOCVD growth for emission wavelengths of 4.6 mum-4.8 mum with low threshold current density (1.5 KA/cm2) at room temperature (RT) and reduced temperature sensitivity.
Keywords :
MOCVD; current density; quantum cascade lasers; semiconductor growth; MOCVD; current density; quantum-cascade lasers; temperature 293 K to 298 K; temperature sensitivity; wavelength 4.6 mum to 4.8 mum; Electrooptic devices; Laboratories; MOCVD; Pulse measurements; Quantum cascade lasers; Quantum well lasers; Superlattices; Temperature distribution; Temperature sensors; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636001
