High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications

Author

Whelan, C.S. ; Hoke, W.E. ; McTaggart, R.A. ; Lyman, P.S. ; Marsh, P.F. ; Leoni, R.E., III ; Lichwala, S.J. ; Kazior, T.E.

Author_Institution

Adv. Device Center, Raytheon Microelectron., Andover, MA, USA

Volume

3

fYear

1999

fDate

13-19 June 1999

Firstpage

1187

Abstract

Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or equal to 3 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs which allow operation at V/sub ds/=6 V, resulting in high power and gain at 10 GHz.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor device breakdown; 10 GHz; 6 V; EHF; InAlGaAs-In/sub 0.32/Ga/sub 0.68/As; MM-wave power applications; SHF; high breakdown voltage; metamorphic HEMT; microwave power applications; Density measurement; Frequency estimation; Gallium arsenide; HEMTs; MODFETs; Microelectronics; Microwave devices; Voltage; Wet etching; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779599

Filename

779599