• DocumentCode
    2991227
  • Title

    Vertical 3D interconnect through aligned wafer bonding

  • Author

    Peizer, R. ; Mafthias, T. ; Kettner, P. ; Lindner, P. ; Schaefer, C.

  • Author_Institution
    EV Group, Schaerding, Austria
  • fYear
    2003
  • fDate
    28-30 Oct. 2003
  • Firstpage
    512
  • Lastpage
    517
  • Abstract
    Wafer-to-wafer chip stack technologies offer an approach to interconnect two integrated circuits for the purpose of shortening the wiring between them. With this 3D interconnect solution, increasing device functional density and reducing total packaging costs are focused on. Wafers are aligned, bonded and the interlayer is connected electrically, and then thinned-back, prior to dicing. High precision wafer alignment and subsequent thermo-compression bonding, to form the electrical interconnects, are considered as a key enabling technology for 3D interconnect. In this article, the current status of wafer alignment and wafer bonding as well as integration in high-volume production environments is analyzed. As the success of this technology is highly dependent on the alignment accuracy of wafers face-to-face below 1 /spl mu/m, a high emphasis lies in the capability of the process equipment, which must cover the special needs of 3D interconnect technology, such as high accuracy, the use of single side processed wafers, and 300 mm wafer capability.
  • Keywords
    chip scale packaging; integrated circuit interconnections; wafer bonding; 300 mm; CSP technology; aligned wafer bonding; alignment accuracy; electrically connected interlayer; functional density increase; high-volume production environments; packaging cost reduction; single side processed wafers; stacked wafer-level chip-scale packages; thermo-compression bonding; vertical 3D interconnect; wafer alignment; wafer dicing; wafer thinning; wafer-to-wafer chip stack technologies; Chip scale packaging; Costs; Electronics packaging; Force control; Integrated circuit interconnections; Integrated circuit technology; Production; Temperature control; Wafer bonding; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    0-7803-8168-8
  • Type

    conf

  • DOI
    10.1109/EPTC.2003.1298790
  • Filename
    1298790