Terahertz silicon lasers

Author

Pavlov, Sergey G. ; Hübers, Heinz-Wilhelm ; Böttger, Ute ; Zhukavin, Roman Kh ; Tsyplenkov, Veniamin V. ; Kovalevsky, Konstantin A. ; Shastin, Valery N.

Author_Institution

German Aerosp. Center, Inst. of Planetary Res., Berlin

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

49

Lastpage

50

Abstract

Stimulated donor and Raman Stokes emission has been achieved under intracenter excitation and photoionization of shallow donor centers in silicon. A pulsed laser emission of up to a few mW of peak power in the 1-7 THz frequency range has been obtained at low temperatures (< 30 K). Thorough laser characterization and further optimization of the laser threshold and efficiency has been carried out.

Keywords

Raman lasers; elemental semiconductors; impurity states; laser beams; photoionisation; semiconductor lasers; silicon; stimulated Raman scattering; stimulated emission; submillimetre wave lasers; Si; frequency 1 THz to 7 THz; intracenter excitation; laser characterization; laser efficiency; laser threshold; photoionization; pulsed laser emission; shallow donor centers; stimulated Raman Stokes emission; stimulated donor emission; terahertz silicon lasers; Free electron lasers; Laser excitation; Laser transitions; Optical pumping; Optical scattering; Pump lasers; Quantum cascade lasers; Semiconductor lasers; Silicon; Stimulated emission; laser; silicon; stimulated emission; terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4636003

Filename

4636003