1240nm GaInNAs high power laser diodes

Author

Bisping, D. ; Pucicki, D. ; Höfling, S. ; Habermann, S. ; Ewert, D. ; Fischer, M. ; Koeth, J. ; Zimmermann, C. ; Weinmann, P. ; Kamp, M. ; Forchel, A.

Author_Institution

Tech. Phys., Univ. Wurzburg, Wurzburg

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

51

Lastpage

52

Abstract

GaInNAs-based 1240 nm laser diodes are realized with internal losses as low as 0.5 cm^-1 allowing maximum output powers of 9 W at room temperature under continuous-wave operation. Wavelength stabilized tapered laser diodes show output powers of 1W and M² down to 1.4 demonstrating potential for pumping applications.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser stability; optical losses; optical pumping; quantum well lasers; wide band gap semiconductors; GaInNAs; QW active layer; continuous-wave operation; high-power laser diodes; internal losses; optical cavity; optical pumping; power 1 W; power 9 W; temperature 293 K to 298 K; wavelength 1240 nm; wavelength stabilized tapered laser diodes; Diode lasers; Distributed Bragg reflectors; Gallium arsenide; Laser excitation; Optical materials; Optical pumping; Power generation; Pulse amplifiers; Pump lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4636004

Filename

4636004