Title :
High power and low resistive GaInNAs-VCSELs with buried tunnel junctions
Author :
Onishi, Yutaka ; Saga, Nobuhiro ; Koyama, Kenji ; Doi, Hideyuki ; Ishizuka, T. ; Yamada, Takashi ; Fujii, Kosuke ; Mori, Hiroki ; Hashimoto, Junichi ; Shimazu, M. ; Katsuyama, Tsukuru
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama
Abstract :
GaInNAs-VCSELs with buried tunnel junction structures are proposed and demonstrated. The maximum output powers of 4.2 mW at 25degC and 2.2 mW at 85degC are achieved with a low resistance of 65 Omega.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; quantum well lasers; semiconductor quantum wells; surface emitting lasers; GaInNAs; buried tunnel junction; low resistive VCSEL; power 2.2 mW; power 4.2 mW; quantum well; resistance; resistance 65 ohm; temperature 25 degC; temperature 85 degC; vertical-cavity surface-emitting laser; Absorption; Apertures; Distributed Bragg reflectors; Electric resistance; Laboratories; Optical losses; Oxidation; Research and development; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636005
