High temperature operation of 1.26 μm ridge waveguide laser with InGaAs metamorphic buffer on GaAs substrate

Author

Arai, Masakazu ; Fujisawa, Takeshi ; Kobayashi, Wataru ; Nakashima, Kiichi ; Yuda, Masahiro ; Kondo, Yasuhiro

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

57

Lastpage

58

Abstract

We have successfully developed a 1.26 mum ridge waveguide laser diode with an InGaAs metamorphic buffer on an GaAs substrate grown by metal-organic vapor-phase epitaxy. This laser has achieved the highest operating temperature (188degC) reported for a metamorphic laser.

Keywords

III-V semiconductors; MOCVD; buffer layers; gallium arsenide; indium compounds; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; InGaAs-GaAs; high-temperature laser operation; metal-organic vapor-phase epitaxy; metamorphic buffer; ridge waveguide laser diode; semiconductor laser; temperature 188 degC; wavelength 1.26 mum; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Rough surfaces; Semiconductor lasers; Substrates; Surface roughness; Temperature distribution; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4636007

Filename

4636007