• DocumentCode
    2991306
  • Title

    Experimental investigation of temperature dependence of 1.55μm GaInNAsSb/GaNAs QW lasers grown in MBE

  • Author

    Bae, H. ; Sarmiento, T. ; Harris, J.S.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., Stanford, CA
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    We investigated the temperature dependence of 1.55 mum GaInNAsSb/GaNAs QW lasers, with 3 different QW structures. T0 improves by reducing Auger recombination or carrier leakage into GaNAs barrier, but significant improvement of T0 remains challenging and will require a new barrier material.
  • Keywords
    Auger effect; III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; thermo-optical effects; Auger recombination; GaInNAsSb-GaNAs; GaInNAsSb/GaNAs QW lasers; MBE; carrier leakage; temperature dependence; wavelength 1.55 mum; Gallium arsenide; Laboratories; Nitrogen; Optical materials; Photonics; Solid lasers; Solid state circuits; Spontaneous emission; Stability; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4636008
  • Filename
    4636008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2991306