Title :
Experimental investigation of temperature dependence of 1.55μm GaInNAsSb/GaNAs QW lasers grown in MBE
Author :
Bae, H. ; Sarmiento, T. ; Harris, J.S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., Stanford, CA
Abstract :
We investigated the temperature dependence of 1.55 mum GaInNAsSb/GaNAs QW lasers, with 3 different QW structures. T0 improves by reducing Auger recombination or carrier leakage into GaNAs barrier, but significant improvement of T0 remains challenging and will require a new barrier material.
Keywords :
Auger effect; III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; thermo-optical effects; Auger recombination; GaInNAsSb-GaNAs; GaInNAsSb/GaNAs QW lasers; MBE; carrier leakage; temperature dependence; wavelength 1.55 mum; Gallium arsenide; Laboratories; Nitrogen; Optical materials; Photonics; Solid lasers; Solid state circuits; Spontaneous emission; Stability; Temperature dependence;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636008
