DocumentCode
2991323
Title
Thermal properties of Silicon compatible GaNAsP SQW lasers
Author
Chamings, J. ; Adams, A.R. ; Sweeney, S.J. ; Kunert, B. ; Volz, K. ; Stolz, W.
Author_Institution
Fac. of Eng. & Phys. Sci., Surrey Univ., Guildford
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
61
Lastpage
62
Abstract
We report on the temperature dependent properties of GaNAsP/GaP-based SQW lasers. While the radiative component of threshold is relatively temperature stable, the threshold current increases strongly with temperature and is attributed to a leakage process.
Keywords
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; integrated optoelectronics; nitrogen compounds; quantum well lasers; thermo-optical effects; GaNAsP; GaP; GaP-based SQW laser; Si; leakage process; monolithic optoelectronic integrated circuits; silicon compatible GaNAsP SQW laser; temperature dependent properties; thermal properties; threshold current; Charge carrier density; Laser theory; Optical materials; Photonic band gap; Pressure measurement; Radiative recombination; Semiconductor lasers; Silicon; Spontaneous emission; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4636009
Filename
4636009
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